Open AccessPerformance of Gate Engineered Symmetric Double Gate MOS Devices and circuits for ultra-low power Analog and RF applications
Author(s) -
N. Mohankumar
Publication year - 2020
Publication title -
international journal of advanced trends in computer science and engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3091
DOI - 10.30534/ijatcse/2020/52922020
Subject(s) - electronic circuit , ultra low power , power (physics) , electrical engineering , materials science , electronic engineering , optoelectronics , engineering , physics , power consumption , quantum mechanics