
Effect of KOH Concentration on the Properties of Undoped Porous GaN on Sapphire Substrate Prepared by UV assisted Electrochemical Etching
Author(s) -
Azzafeerah Mahyuddin
Publication year - 2020
Publication title -
international journal of advanced trends in computer science and engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3091
DOI - 10.30534/ijatcse/2020/4491.12020
Subject(s) - materials science , sapphire , substrate (aquarium) , porosity , etching (microfabrication) , electrochemistry , chemical engineering , optoelectronics , nanotechnology , composite material , chemistry , electrode , optics , layer (electronics) , laser , oceanography , physics , engineering , geology