Open AccessDevelopment of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)
Author(s) -
I. R. Bekpulatov,
А.С. Рысбаев,
Sh.Kh. Dzhuraev,
A.S. Kasymov
Publication year - 2018
Publication title -
eurasian journal of physics and functional materials
Language(s) - English
Resource type - Journals
eISSN - 2616-8537
pISSN - 2522-9869
DOI - 10.29317/ejpfm.2018020409
Subject(s) - ion implantation , annealing (glass) , ion , materials science , silicon , thermal , analytical chemistry (journal) , atomic physics , crystallography , chemistry , optoelectronics , physics , metallurgy , thermodynamics , organic chemistry , chromatography
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