Open AccessA 65nm CMOS 60 GHz Class F-E Power Amplifier for WPAN Applications
Author(s) -
Nathalie Deltimple,
Sophie Drean,
Éric Kerhervé,
Baudouin Martineau,
Didier Belot
Publication year - 2020
Publication title -
jics. journal of integrated circuits and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.125
H-Index - 11
eISSN - 1872-0234
pISSN - 1807-1953
DOI - 10.29292/jics.v8i1.368
Subject(s) - amplifier , cmos , electrical engineering , power (physics) , electronic engineering , rf power amplifier , waveform , power gain , power bandwidth , power added efficiency , computer science , engineering , telecommunications , voltage , physics , quantum mechanics
This work presents a two-stage 60 GHz Power Amplifier designed in a 65nm CMOS technology dedicated to low cost Wireless Personal Area Network (WPAN) applications. In order to provide a high efficiency operation, the PA is based on a Class E power stage. A Class F driver stage is also designed to provide a square waveform signal to the Class-E power stage. To realize the output networks of both driver and power stage at 60 GHz, distributed elements are used instead of lumped elements. The post-layout simulation results show a saturated output power of 15 dBm with a peak PAE of 26% at 60 GHz. It achieves a gain of 15dB at 60 GHz.