Open AccessA Study of Flicker Noise in MOS Transistor Under Switched Bias Condition
Author(s) -
Matías Miguez,
Alfredo Arnaud
Publication year - 2020
Publication title -
jics. journal of integrated circuits and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.125
H-Index - 11
eISSN - 1872-0234
pISSN - 1807-1953
DOI - 10.29292/jics.v3i2.283
Subject(s) - flicker noise , flicker , transistor , autocorrelation , noise (video) , physics , electronic engineering , electrical engineering , statistical physics , optoelectronics , computer science , mathematics , engineering , statistics , noise figure , voltage , amplifier , cmos , artificial intelligence , image (mathematics)
This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only Shockley-Read-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental data. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations.