Open AccessImpact of the Nitrogen Concentration of Sub-1.3 nm Gate Oxides on 65 nm Technology Transistor Parameters
Author(s) -
Antonio Rotondaro,
R. T. Laaksonen,
Surya Prakash Singh
Publication year - 2020
Publication title -
jics. journal of integrated circuits and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.125
H-Index - 11
eISSN - 1872-0234
pISSN - 1807-1953
DOI - 10.29292/jics.v2i2.265
Subject(s) - nmos logic , pmos logic , materials science , threshold voltage , gate oxide , transistor , optoelectronics , nitrogen , oxide , negative bias temperature instability , degradation (telecommunications) , electron mobility , analytical chemistry (journal) , voltage , electrical engineering , chemistry , metallurgy , organic chemistry , chromatography , engineering
The nitrogen concentration of ultrathin gate oxides (sub-1.3 nm) was varied in a wide range (from 13 % to 23 %). The threshold voltage and the channel carrier mobility of advanced 65 nm technology CMOSFET transistors fabricated with these oxides were analyzed. It was observed that increasing the nitrogen concentration in the gate oxide results in a negative shift of the threshold voltage for both NMOS and PMOS devices and a degradation of the hole mobility. It was also observed that pchannel transistors are more sensitive to the nitrogen concentration of the gate oxide than n-channel transistors.