Open AccessReliability analysis of gamma- and X-ray TID effects, on a commercial AlGaN/GaN based FET
Author(s) -
Alexis C. Vilas Bôas,
Saulo Gabriel Alberton,
N. H. Medina,
Vitor Ângelo Paulino,
M. A. A. de Melo,
R.B.B. Santos,
Renato Giacomini,
Tássio Cavalcante,
Rafael Galhardo Vaz,
Evaldo C. F. Pereira Júnior,
L. E. Seixas,
Saulo Finco,
Marcilei A. Guazzelli
Publication year - 2021
Publication title -
jics. journal of integrated circuits and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.125
H-Index - 11
eISSN - 1872-0234
pISSN - 1807-1953
DOI - 10.29292/jics.v16i3.566
Subject(s) - robustness (evolution) , high electron mobility transistor , materials science , optoelectronics , gallium nitride , absorbed dose , reliability (semiconductor) , radiation , dose rate , wide bandgap semiconductor , transistor , electrical engineering , optics , physics , engineering , medical physics , voltage , nanotechnology , biochemistry , chemistry , power (physics) , layer (electronics) , quantum mechanics , gene
In this work, measurements were taken to investigate the robustness of a GaN HEMT to TID by a 60CO Source. These results will be compared with a previous X-ray based work. The robustness was investigated through IxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on- and off- state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Mainly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the VTH values due to the TID, in this device is independent of the dose rate and the radiation source.