Open AccessStudy of the UTBB BESOI Tunnel-FET working as a Dual-Technology Transistor
Author(s) -
Carlos Augusto Bergfeld Mori,
Paula Ghedini Der Agopian,
João Antônio Martino
Publication year - 2021
Publication title -
jics. journal of integrated circuits and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.125
H-Index - 11
eISSN - 1872-0234
pISSN - 1807-1953
DOI - 10.29292/jics.v16i2.208
Subject(s) - nmos logic , electrical engineering , transistor , tunnel field effect transistor , optoelectronics , dual (grammatical number) , silicon on insulator , field effect transistor , materials science , silicon , engineering physics , engineering , voltage , art , literature
In this work, we further investigate the operation of the BESOI (Back-Enhanced Silicon-On Insulator) Dual-Technology FET, analyzing not only its behavior as a p-type Tunnel-FET when a negative back bias is applied to the struc-ture, but also as an nMOS when a positive back bias is ap-plied. The working principle is based on the generation of a channel of either holes or electrons by the back gate electric field, which can then be depleted through the front gate bias. TCAD device simulation was used for the proof of concept.