Open AccessDesign of Transfer-Gated CMOS Active Pixels Deploying Conventional PN-Junction Photodiodes
Author(s) -
Lidiane Campos Costa,
R. A. Souza,
Davies William de Lima Monteiro,
Luciana P. Salles
Publication year - 2020
Publication title -
jics. journal of integrated circuits and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.125
H-Index - 11
eISSN - 1872-0234
pISSN - 1807-1953
DOI - 10.29292/jics.v15i3.180
Subject(s) - photodiode , cmos , transistor , cmos sensor , swing , channel (broadcasting) , image sensor , electronics , pixel , optoelectronics , leakage (economics) , computer science , materials science , electronic engineering , electrical engineering , engineering , artificial intelligence , voltage , mechanical engineering , economics , macroeconomics
This paper presents a comparative study of six active pixel sensor (APS) schemes by means of simulations and experiments. The optical sensor used was a silicon photodiode with integrated electronics in a standard 0.35 µm CMOS technology. We analyzed how the transistor characteristics, such as channel resistance and leakage current, among others, can influence the APS response. Furthermore, we demonstrated how the choice of APS model affects sensor parameters such as output swing and fill factor, among others. The results presented and the understanding of the operational cycle of the CMOS transfer-gated APS aims at guiding better choices for different applications and the better transistor type in the project.