Open AccessPerformance and Analysis of n-Type Vertically Stacked Nanowires Regarding Harmonic Distortion
Author(s) -
Cesar Augusto Belchior de Carvalho,
Genaro Mariniello da Silva,
Bruna Cardoso Paz,
S. Barraud,
M. Vinet,
O. Faynot,
Marcelo Antonio Pavanello
Publication year - 2020
Publication title -
jics. journal of integrated circuits and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.125
H-Index - 11
eISSN - 1872-0234
pISSN - 1807-1953
DOI - 10.29292/jics.v15i2.202
Subject(s) - total harmonic distortion , thd analyzer , distortion (music) , linearity , harmonic , figure of merit , silicon on insulator , harmonic analysis , intermodulation , materials science , electronic engineering , physics , acoustics , optoelectronics , electrical engineering , engineering , voltage , silicon , cmos , amplifier
This paper studies the harmonic distortion (or non-linearity) of vertically stacked SOI nanosheets with different fin widths and channel lengths. The total harmonic distortion and third order harmonic distortion are used as figures of merit in this work. The four approaches applied verifies the correlation between the harmonic distortions and the variety of transistor’s dimensions available for analysis.