Open AccessElectrical Characterization of Positively Charged SiO Coatings for MOS Solar Cells
Author(s) -
William Tsuyoshi Shiga,
Stefanie Pereira Regis,
Gabriel Oliveira Louzada,
Marcos Norio Watanabe,
Fábio Izumi,
Verônica Christiano Abê,
Ricardo C. Rangel,
Sebastião Gomes dos Santos Filho
Publication year - 2020
Publication title -
jics. journal of integrated circuits and systems
Language(s) - English
Resource type - Journals
eISSN - 1872-0234
pISSN - 1807-1953
DOI - 10.29292/jics.v15i2.175
Subject(s) - materials science , permittivity , capacitor , fabrication , oxide , doping , sintering , silicon , semiconductor , relative permittivity , optoelectronics , composite material , dielectric , metallurgy , electrical engineering , voltage , medicine , alternative medicine , pathology , engineering
This article discusses fabrication, characteriza-tion and studies of the C-V characteristics of SiO layers depos-ited by PVD on Si-p substrates with doping around 1x1016 cm-3. MOS capacitors (Metal-Oxide-Semiconductor) with Al/SiO2/Si-P, Al/SiO/Si-P and Al/SiO/SiO2/Si-P structures were manufactured. It was observed the presence of negative charges in the structure with SiO/SiO2 with density of effective charges Qf ≈ -1x1012 cm-2 and relative permittivity of the die-lectric εr = 2.9. After sintering in ultrapure Ar and N2+H2(10%) the relative permittivity changed to εr = 4.52 and the layers stayed positively charged (Qf = (0.5-1.6)x1012 cm-2), which is adequate for positively charged anti-reflective (AR) coatings of MOS solar cells.