Open AccessCalibrations coefficients for determination of concentrations of vacancy-oxygen-related complexes and oxygen dimer in silicon by means of infrared absorption spectroscopy
Author(s) -
I. F. Medvedeva,
V. P. Markevich,
K. A. Talkachova,
A. A. Fadzeyeva,
D. N. Zhdanovich,
Л. И. Мурин
Publication year - 2021
Publication title -
vescì nacyânalʹnaj akadèmìì navuk belarusì. seryâ fìzìka-tèhnìčnyh navuk
Language(s) - English
Resource type - Journals
eISSN - 2524-244X
pISSN - 1561-8358
DOI - 10.29235/1561-8358-2021-66-2-227-233
Subject(s) - infrared spectroscopy , analytical chemistry (journal) , silicon , oxygen , absorption (acoustics) , absorption spectroscopy , infrared , vacancy defect , attenuation coefficient , materials science , chemistry , crystallography , optics , optoelectronics , physics , organic chemistry , chromatography , composite material
Vacancy-oxygen complexes VnOm (n, m ≥ 1) in crystalline silicon are nucleation centers for oxygen precipitates, which are widely used as internal getters in modern technologies of production of silicon-based electronic devices and integrated circuits. For the controllable formation of oxygen precipitates in Si crystals in the technology processes the methods of determination of concentrations of the V n O m complexes are required. The aim of the present work was to find values of the calibration coefficients for determination of concentrations of the V n O m defects in Si from intensities of infrared (IR) absorption bands associated with the local vibrational modes (LVM) of these complexes. A combined electrical (Hall effect) and optical (IR absorption) study of vacancy-oxygen defects in identical silicon crystals irradiated with 6 MeV electrons was carried out. Based on the analysis of the data obtained, the values of the calibration coefficient for the determination of concentration of the vacancy-oxygen (VO) complex in silicon by the infrared absorption method were established: for measurements at room temperature (RT) – NVO = 8.5 · 10 16 · αVO-RT cm–3 , in the case of low-temperature (LT, Т ≡ 10 K) measurements – N VO = 3.5 · 10 16 · αVO-LT cm–3 , where αVO-RT(LT) are absorption coefficients in maxima of the LVM bands due to the VO complex in the spectra measured at corresponding temperatures. Calibration coefficients for the determination of concentrations of other V n Om (VO 2 , VO 3 , VO 4 , V 2 O and V 3 O) complexes and the oxygen dimer (O 2 ) from an analysis of infrared absorption spectra measured at room temperature have been also determined.