Open AccessSynthesis and photoelectrochemical properties of bismuth thioiodide
Author(s) -
М. Е. Козыревич,
Д. В. Ивашенко,
Evgeny Bondarenko,
Е.А. Streltsov,
А. И. Кулак
Publication year - 2019
Publication title -
vescì nacyânalʹnaj akadèmìì navuk belarusì. seryâ hìmìčnyh navuk
Language(s) - English
Resource type - Journals
eISSN - 2524-2342
pISSN - 1561-8331
DOI - 10.29235/1561-8331-2018-54-4-413-418
Subject(s) - photocurrent , chemical bath deposition , band gap , photoelectric effect , photoelectrochemical cell , photoelectrochemistry , bismuth , monocrystalline silicon , electrolyte , iodide , semiconductor , materials science , sulfide , inorganic chemistry , deposition (geology) , lead sulfide , electrode , chemistry , optoelectronics , electrochemistry , silicon , metallurgy , paleontology , sediment , biology , quantum dot
The method of chemical deposition of monocrystalline bismuth thioiodide BiSI needles with a high quantum efficiency of photocurrent generation (up to 55 %) in aqueous solutions of electrolytes has been developed. It was revealed that the introduction of sulfide and iodide anions into the electrolyte solution leads to an increase of the absolute photocurrent values, as well as the presence of sulfide ions causes the significant (about 0.5 V) shift of BiSI bands energy towards more negative electrode potentials. The observed effect is of interest for increasing the photovoltage of solar cells based on BiSI and can find application in heterogeneous sensitized systems for increasing the efficiency of photoelectrons injection from a narrow-band sensitizer into a matrix of a wide-bandgap semiconductor.