Open AccessMemristor structure with the effect of switching resistance based on silicon nitride thin layers
Author(s) -
Ф. Ф. Комаров,
И. А. Романов,
Л. А. Власукова,
И. Н. Пархоменко,
А. А. Цивако,
N. S. Kovalchuk
Publication year - 2020
Publication title -
doklady nacionalʹnoj akademii nauk belarusi
Language(s) - English
Resource type - Journals
eISSN - 2524-2431
pISSN - 1561-8323
DOI - 10.29235/1561-8323-2020-64-4-403-410
Subject(s) - materials science , tin , silicon , optoelectronics , silicon nitride , substrate (aquarium) , thermal conduction , poole–frenkel effect , contact resistance , thin film , layer (electronics) , dielectric , nanotechnology , composite material , oceanography , metallurgy , geology