Open AccessMathematical and computer simulation of semiconductor systems of various dimensions and the elements of device structures based on them
Author(s) -
N. A. Poklonski
Publication year - 2021
Publication title -
vescì nacyânalʹnaj akadèmìì navuk belarusì. seryâ fìzìka-matèmatyčnyh navuk
Language(s) - English
Resource type - Journals
eISSN - 2524-2415
pISSN - 1561-2430
DOI - 10.29235/1561-2430-2021-57-4-495-505
Subject(s) - semiconductor , germanium , silicon , engineering physics , state (computer science) , semiconductor device , computer science , materials science , physics , nanotechnology , optoelectronics , algorithm , layer (electronics)
The article, in the form of a minireview, reflects the results of theoretical, and partly experimental investigations of the electrical, optical and magnetic phenomena in three-dimensional, two-dimensional, one-dimensional and zero-dimensional systems and elements of device structures made of germanium, silicon, carbon and other chemical elements carried out at the Faculty of Physics of Belarusian State University over the past 25 years.