Open AccessModel of stationary migration of free and hopping via acceptors holes in a crystalline semiconductor
Author(s) -
N. A. Poklonski,
A. N. Dzeraviaha,
С. А. Вырко
Publication year - 2020
Publication title -
vescì nacyânalʹnaj akadèmìì navuk belarusì. seryâ fìzìka-matèmatyčnyh navuk
Language(s) - English
Resource type - Journals
eISSN - 2524-2415
pISSN - 1561-2430
DOI - 10.29235/1561-2430-2020-56-1-92-101
Subject(s) - electric field , condensed matter physics , diffusion , semiconductor , charge (physics) , fick's laws of diffusion , stationary state , physics , constant (computer programming) , field (mathematics) , materials science , quantum mechanics , mathematics , computer science , programming language , pure mathematics
In the diffusion-drift approximation, we have constructed a phenomenological theory of the coexisting migration of v -band holes and holes by means of hopping from hydrogen-like acceptors in the charge state (0) to acceptors in the charge state (−1). A p -type crystalline semiconductor is considered at a constant temperature, to which an external stationary electric field is applied. In the linear approximation, analytical expressions for the screening length of the static electric field and the length of the diffusion of v -band holes and the holes quasilocalized on acceptors are obtained for the first time. The presented relations, as special cases, contain well-known expressions. It is shown that the hopping migration of holes via acceptors leads to a decrease in the screening length and in the diffusion length.