Open AccessThe Effect of Terbium (Tb) Doped İnterface on The Electrical Characteristics of Al /P-Si Schotkky Diodes
Author(s) -
Ömer Sevgili
Publication year - 2021
Publication title -
international journal of pure and applied sciences
Language(s) - English
Resource type - Journals
ISSN - 2149-0910
DOI - 10.29132/ijpas.854046
Subject(s) - terbium , nuclear chemistry , materials science , chemistry , physics , optoelectronics , luminescence