The Effect of Terbium (Tb) Doped İnterface on The Electrical Characteristics of Al /P-Si Schotkky Diodes | Zendy

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The Effect of Terbium (Tb) Doped İnterface on The Electrical Characteristics of Al /P-Si Schotkky Diodes

Author(s) -

Ömer Sevgi̇li̇

Publication year - 2021

Publication title -

international journal of pure and applied sciences

Language(s) - English

Resource type - Journals

ISSN - 2149-0910

DOI - 10.29132/ijpas.854046

Subject(s) - terbium , nuclear chemistry , materials science , chemistry , physics , optoelectronics , luminescence

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