Open AccessA STUDY OF TOTAL IONISING DOSE EFFECTS ON HFO2 AND AL2O3 GATE OXIDE SOI FINFET
Author(s) -
Ashutosh Dixit,
Parvesh Saini,
Sandeep Kumar Sunori
Publication year - 2021
Publication title -
webology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.259
H-Index - 18
ISSN - 2349-6193
DOI - 10.29121/web/v18i4/136
Subject(s) - silicon on insulator , oxide , materials science , gate oxide , optoelectronics , ionizing radiation , electrical engineering , silicon , physics , transistor , engineering , irradiation , nuclear physics , metallurgy , voltage
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