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Semiconducting Thin Films of CuSbS2
Author(s) -
Sarah Messina,
Irma Paz Hernández Rosales,
Yolanda Peña Méndez
Publication year - 2011
Publication title -
química hoy chemistry sciences
Language(s) - English
Resource type - Journals
ISSN - 2007-1183
DOI - 10.29105/qh2.1-87
Subject(s) - crystallite , thin film , band gap , materials science , chemical bath deposition , ternary operation , electrical resistivity and conductivity , solid state , optoelectronics , conductivity , analytical chemistry (journal) , deposition (geology) , ternary compound , nanotechnology , chemical engineering , chemistry , inorganic chemistry , metallurgy , electrical engineering , computer science , paleontology , engineering , chromatography , sediment , biology , programming language
In this paper we present a method to produce polycrystalline CuSbS2 thin ?lms through a solid-state reaction at 350 ºC and 400 ºC involving thin ?lm multilayer of Sb2S3 -CuS or Cu2-xSe by chemical bath deposition technique. The formation of the ternary compound was confirmed by X-ray di?raction (XRD). A direct optical band gap of approx. 1.57 eV anda p-type electrical conductivity of 10-3 (Ω•cm)-1 were measured. These optoelectronic characteristics show perspective for the use of CuSbS, as a suitable absorber material in photovoltaic applications.

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