Open AccessPreparación de películas delgadas de AS2S3 por depósito químico con perspectivas de aplicacíon en celdas solares
Author(s) -
Yolanda Peña Méndez,
A.B.C Elizaur Benitez,
Shadai Lugo Loredo,
Perla Elizondo Martínez,
Treviño Garza
Publication year - 2010
Publication title -
quimica hoy
Language(s) - English
Resource type - Journals
ISSN - 2007-1183
DOI - 10.29105/qh1.1-52
Subject(s) - materials science , chemical bath deposition , physics , chemistry , thin film , nanotechnology
In this paper we obtained thin films of As2S3 by chemical bath deposition. The films were prepared at a temperature of 80 ºC for 3 hours each deposit. They were thermally treated at 180 ºC and 250 ºC for 30 minutes for 1 hour, respectively. The energy gap was calculated 2.9 eV. The conductivity was around, 3.62X10-1 (O*cmr'.
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