Open AccessDesign Analysis of SRAM Cell with Improved Noise Margin based on Aspect Ratio Adjustments
Author(s) -
Y. Alekhya
Publication year - 2018
Publication title -
helix
Language(s) - English
Resource type - Journals
eISSN - 2319-5592
pISSN - 2277-3495
DOI - 10.29042/2018-2645-2650
Subject(s) - static random access memory , noise margin , noise (video) , margin (machine learning) , cmos , electronic engineering , computer science , field programmable gate array , voltage , embedded system , engineering , electrical engineering , transistor , artificial intelligence , machine learning , image (mathematics)
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