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Influence of Temperature on the Performance of Photovoltaic Polycrystalline Silicon Module in the Bruneian Climate
Author(s) -
A.Q. Malik,
Mu-Guen Chee
Publication year - 2017
Publication title -
asean journal on science and technology for development/asean journal on science and technology for development
Language(s) - English
Resource type - Journals
eISSN - 2224-9028
pISSN - 0217-5460
DOI - 10.29037/ajstd.252
Subject(s) - polycrystalline silicon , materials science , power (physics) , silicon , crystallite , thermal , photovoltaic system , current (fluid) , optoelectronics , environmental science , electrical engineering , nuclear engineering , thermodynamics , composite material , metallurgy , engineering , physics , layer (electronics) , thin film transistor
The influence of working temperature for  a  polysilicon module has been investigated in Brunei Darussalam for a period of two years.  The rise in temperature produces thermal agitation which not only increases the dark current but also enhances the losses of free carriers in a polycrystalline module. The efficiency and the output power decreases with an increase in the working temperature. A maximum decline in the output power of 97% has been measured under a dominated diffused radiation environment. The temperature coefficients have been obtained and equations are developed to evaluate the change in the rating of module at any working temperature with reference to their values at STC. 

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