Open AccessEUROPIUM SILICATE THIN FILMS FABRICATED BY RF MAGNETRON SPUTTERING AND THERMAL TREATMENT
Author(s) -
Young Chul Shin,
Eun Hong Kim,
Tae Geun Kim
Publication year - 2017
Publication title -
asean journal on science and technology for development/asean journal on science and technology for development
Language(s) - English
Resource type - Journals
eISSN - 2224-9028
pISSN - 0217-5460
DOI - 10.29037/ajstd.195
Subject(s) - sputtering , x ray photoelectron spectroscopy , europium , materials science , sputter deposition , analytical chemistry (journal) , thin film , photoluminescence , annealing (glass) , layer (electronics) , optoelectronics , metallurgy , nanotechnology , chemical engineering , chemistry , luminescence , chromatography , engineering
We report the fabrication and optical characteristics of europium silicate thin films. Layer structures of Eu2O3/SiOX/Si (100) were deposited by an rf-sputtering method and annealed at 1100°C by rapid thermal annealing (RTA). Two methods were used for the deposition of SiOX layer: One was deposited by sputtering using SiO2 target (Ar gas at a rate of 50 sccm) and the other was deposited by reactive sputtering using Si target (Ar gas at a rate of 45 sccm, with an O2 gas at a rate of 5 sccm). Photoluminescence peak at 430 nm was observed in the sample composed of SiOx interlayer sputtered from SiO2 target. In comparison, PL peak at 570 nm was observed in the other sample, the SiOx layer of which was deposited by reactive sputtering from Si target. The compositional distributions of these samples were analyzed by X-ray photoelectron spectroscopy (XPS).