Open AccessINVESTIGATION OF PHYSICAL PRINCIPLES OF RESISTIVE SWITCHING IN RERAM STRUCTURES BASED ON HAFNIUM OXIDE
Author(s) -
Ekaterina Ganykina,
Asrar Rezvanov,
Yevgeny Gornev
Publication year - 2021
Language(s) - English
Resource type - Conference proceedings
DOI - 10.29003/m2491.mmmsec-2021/130-132
Subject(s) - resistive random access memory , hafnium , materials science , resistive touchscreen , optoelectronics , electrical engineering , voltage , metallurgy , engineering , zirconium
In this paper, the physical principles of resistive switching in the Au/Ti/HfO2/Au/Si memristor are investigated, including oxygen ions transport, heat transfer and electric current flow through the structure.