Open AccessEVALUATION OF THE INFLUENCE OF FINFET STRUCTURE PARAMETERS ON ELECTRICAL CHARACTERISTICS BY TCAD
Author(s) -
Konstantin O. Petrosyants,
Denis Silkin,
D. Popov
Publication year - 2021
Language(s) - English
Resource type - Conference proceedings
DOI - 10.29003/m2489.mmmsec-2021/120-123
Subject(s) - materials science , stack (abstract data type) , technology cad , optoelectronics , doping , electronic engineering , logic gate , work (physics) , engineering physics , computer science , engineering , cad , mechanical engineering , engineering drawing , programming language
In this work, the influence of changes in the FinFET structure parameters, such as the dimensions of the gate stack layers, the shape of the fin or doping levels, on the electrical characteristics of the device is investigated with the TCAD modeling.