Open AccessTCAD AND SPICE MODELING OF SILICON VLSI ELEMENTS TAKING INTO ACCOUNT FOR TEMPERATURE, RADIATION AND AGING EFFECTS
Author(s) -
Konstantin O. Petrosyants
Publication year - 2021
Language(s) - English
Resource type - Conference proceedings
DOI - 10.29003/m2487.mmmsec-2021/112-116
Subject(s) - spice , very large scale integration , electronic engineering , bicmos , materials science , silicon , radiation , computer science , optoelectronics , electrical engineering , engineering , transistor , physics , optics , voltage
RAD-THERM-AGING versions of TCAD and SPICE models have been developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account for various types of radiation effects, temperatures in the wide range of -260°C…+300°C and aging during long-term operation.