
SIMULATION OF REVERSE CURRENT RECOVERY TIME MEASURING DEVISE
Author(s) -
Viktor Kirilov,
Ivan Kobeleva,
Svetlana Schemerov
Publication year - 2021
Language(s) - English
Resource type - Conference proceedings
DOI - 10.29003/m2470.mmmsec-2021/60-62
Subject(s) - computer science , microsecond , diode , current (fluid) , measure (data warehouse) , work (physics) , transistor , electronic engineering , electrical engineering , engineering , mechanical engineering , physics , optics , voltage , database
In this work the simulation of reverse current recovery time in diode structures was performed. Simulation was provided in “NI Multisim” system using internal libraries with models of state-of-art diodes and transistors. It will be shown that simulated device can measure time of reverse recovery in microseconds diapasone.