Open AccessINVESTIGATION OF THERMAL EFFECTS IN HFO2 RRAM STRUCTURES DURING THE RESET PROCESS
Author(s) -
Ekaterina Ganykina,
Е. С. Горнев,
Askar Rezvanov
Publication year - 2020
Publication title -
international forum “microelectronics – 2020”. joung scientists scholarship “microelectronics – 2020”. xiii international conference «silicon – 2020». xii young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Language(s) - English
Resource type - Conference proceedings
DOI - 10.29003/m1646.silicon-2020/347-350
Subject(s) - tin , reset (finance) , materials science , protein filament , amorphous solid , layer (electronics) , resistive random access memory , process (computing) , thermal , optoelectronics , composite material , metallurgy , crystallography , computer science , electrical engineering , chemistry , thermodynamics , physics , engineering , voltage , economics , financial economics , operating system