Open AccessCHARGE-COUPLING EFFECT IN A HALL FIELD ELEMENT BASED ON THIN-FILM SOI-MOS TRANSISTOR
Author(s) -
Д. Н. Иванов,
A. V. Leonov,
В. Н. Мурашев
Publication year - 2020
Publication title -
international forum “microelectronics – 2020”. joung scientists scholarship “microelectronics – 2020”. xiii international conference «silicon – 2020». xii young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Language(s) - English
Resource type - Conference proceedings
DOI - 10.29003/m1617.silicon-2020/261-263
Subject(s) - silicon on insulator , transistor , field effect transistor , coupling (piping) , optoelectronics , materials science , silicon , mosfet , charge (physics) , electrical engineering , hall effect , magnetic field , condensed matter physics , physics , voltage , engineering , quantum mechanics , metallurgy
The Article shows that the effect of charge coupling between the gates of SOI MOS field-effect transistors is also observed in double-gate transistor magnetosensitive Hall-type elements with a silicon film thickness of about 200 nm. It has been determined that in such sensitive elements operating in the electron enrichment mode near the Si-SiO2 interfaces, the effect of charge coupling makes it possible to increase the magnetic sensitivity.