Open AccessLIGHT EMMITTING RECOMBINATION IN HETEROSTRUCTURES GE/SI WITH QUANTUM DOTS FORMED WITH USING ION BEAM RADIATION
Author(s) -
Anatolievich Vladimir,
Ж. В. Смагина,
A. F. Zinovieva,
А. В. Двуреченский,
А. В. Мудрый
Publication year - 2020
Publication title -
international forum “microelectronics – 2020”. joung scientists scholarship “microelectronics – 2020”. xiii international conference «silicon – 2020». xii young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Language(s) - English
Resource type - Conference proceedings
DOI - 10.29003/m1598.silicon-2020/196-199
Subject(s) - nanoclusters , quantum dot , photoluminescence , optoelectronics , materials science , heterojunction , annealing (glass) , silicon , ion , irradiation , ion beam , ion implantation , radiation , germanium , nanotechnology , optics , chemistry , physics , organic chemistry , nuclear physics , composite material