Open AccessTEMPERATURE DEPENDENCE OF THE CONTRASTS OF THE ELECTRON HSQ RESIST AT DIFFERENT METHODS OF DEVELOPMENT
Author(s) -
A. A. Tatarintsev,
Anton Shishlyannikov,
К. В. Руденко,
A. E. Rogozhin,
Alexey Yeshkin
Publication year - 2020
Publication title -
international forum “microelectronics – 2020”. joung scientists scholarship “microelectronics – 2020”. xiii international conference «silicon – 2020». xii young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Language(s) - English
Resource type - Conference proceedings
DOI - 10.29003/m1593.silicon-2020/179-182
Subject(s) - resist , materials science , electron , process development , aqueous solution , salt (chemistry) , nanotechnology , chemistry , process engineering , physics , engineering , layer (electronics) , quantum mechanics