Open AccessADVANCED PROCESS OF DEEP ANISOTROPIC ETCHING OF SILICON WITH A HIGH ASPECT RATIO FOR THE FORMATION OF TSV STRUCTURES
Author(s) -
V. M. Dolgopolov,
Pavel Irakin,
Viktor Varakin
Publication year - 2020
Publication title -
international forum “microelectronics – 2020”. joung scientists scholarship “microelectronics – 2020”. xiii international conference «silicon – 2020». xii young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Language(s) - English
Resource type - Conference proceedings
DOI - 10.29003/m1589.silicon-2020/166-170
Subject(s) - materials science , etching (microfabrication) , silicon , through silicon via , anisotropy , surface roughness , surface finish , deep reactive ion etching , aspect ratio (aeronautics) , optoelectronics , engraving , process (computing) , composite material , reactive ion etching , computer science , optics , layer (electronics) , physics , operating system