Open AccessRADIATION-INDUCED GROWTH EPITAXIAL CASI2 FILM
Author(s) -
Aleksey V. Kacyuba,
А. В. Двуреченский,
Г. Н. Камаев,
В. А. Володин,
V. I. Kirienko
Publication year - 2020
Publication title -
international forum “microelectronics – 2020”. joung scientists scholarship “microelectronics – 2020”. xiii international conference «silicon – 2020». xii young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Language(s) - Uncategorized
Resource type - Conference proceedings
DOI - 10.29003/m1587.silicon-2020/161-163
Subject(s) - epitaxy , materials science , silicon , substrate (aquarium) , raman spectroscopy , molecular beam epitaxy , raman scattering , optoelectronics , radiation , scattering , crystal growth , crystallography , optics , nanotechnology , chemistry , layer (electronics) , oceanography , physics , geology