Open AccessLAYERED IN2SE3 ON SI (111) SURFACE WITH HYSTERESIS OF THE TEMPERATURE DEPENDENCE OF RESISTANCE
Author(s) -
С. А. Пономарев,
Д. И. Рогило
Publication year - 2020
Publication title -
international forum “microelectronics – 2020”. joung scientists scholarship “microelectronics – 2020”. xiii international conference «silicon – 2020». xii young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Language(s) - English
Resource type - Conference proceedings
DOI - 10.29003/m1575.silicon-2020/120-122
Subject(s) - reflection high energy electron diffraction , materials science , hysteresis , electron diffraction , reflection (computer programming) , condensed matter physics , substrate (aquarium) , work (physics) , diffraction , thermodynamics , optics , physics , oceanography , geology , computer science , programming language