Depletion Layer Modeling for Short Gate Length Non-Uniformly Doped GaAs MESFET Under Dark and Illuminated Condition | Zendy

Shweta Tripathi | Zendy; Satyabrata Jit | Zendy

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Depletion Layer Modeling for Short Gate Length Non-Uniformly Doped GaAs MESFET Under Dark and Illuminated Condition

Author(s) -

Shweta Tripathi,

Satyabrata Jit

Publication year - 2014

Publication title -

journal of atomic molecular condensate and nano physics

Language(s) - English

Resource type - Journals

eISSN - 2349-6088

pISSN - 2349-2716

DOI - 10.26713/jamcnp.v1i1.229

Subject(s) - mesfet , doping , depletion region , optoelectronics , materials science , layer (electronics) , dark current , channel (broadcasting) , optics , physics , electrical engineering , photodetector , transistor , nanotechnology , field effect transistor , semiconductor , engineering , voltage

This paper presents an analytical expression for the depletion region height of short gate length GaAs MESFET with non-uniform doping profile in the channel region. Both, dark as well as illuminated conditions have been considered for model formulation. Depletion region height sensitivities on the doping parameters have also been demonstrated.

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