Open AccessDepletion Layer Modeling for Short Gate Length Non-Uniformly Doped GaAs MESFET Under Dark and Illuminated Condition
Author(s) -
Shweta Tripathi,
Satyabrata Jit
Publication year - 2014
Publication title -
journal of atomic, molecular, condensate and nano physics
Language(s) - English
Resource type - Journals
eISSN - 2349-6088
pISSN - 2349-2716
DOI - 10.26713/jamcnp.v1i1.229
Subject(s) - mesfet , doping , depletion region , optoelectronics , materials science , layer (electronics) , dark current , channel (broadcasting) , optics , physics , electrical engineering , photodetector , transistor , nanotechnology , field effect transistor , semiconductor , engineering , voltage
This paper presents an analytical expression for the depletion region height of short gate length GaAs MESFET with non-uniform doping profile in the channel region. Both, dark as well as illuminated conditions have been considered for model formulation. Depletion region height sensitivities on the doping parameters have also been demonstrated.