Open AccessA 28GHz Power Amplifier with Analog Predistortion Linearizer in 65nm CMOS
Author(s) -
Peng He,
Yuqing Dou
Publication year - 2021
Publication title -
journal of electronic research and application
Language(s) - English
Resource type - Journals
eISSN - 2208-3510
pISSN - 2208-3502
DOI - 10.26689/jera.v5i2.2193
Subject(s) - linearizer , predistortion , amplifier , linearity , electronic engineering , linearization , cmos , electrical engineering , linear amplifier , power added efficiency , power (physics) , rf power amplifier , engineering , computer science , physics , nonlinear system , quantum mechanics
This paper proposes that a radio frequency power amplifier is suitable for a 5G millimeter wave. It adopts a three-stage single-ended structure at 28GHz. An analog predistortion linearization method is used to improve the linearity of the power amplifier (PA). As a result, there is a significant improvement in power-added efficiency (PAE) and linearity is achieved. The Ka-band PA is implemented in TSMC 65nm CMOS process. At 1.2V supply voltage, the PA proposed in this paper achieves a saturated output power of 15.9dBm and a PAE of 16%. After linearization, the output power at the 1dB compression point is increased by 2dBm, with efficient gain compensation performance.