z-logo
open-access-imgOpen Access
Comparative analysis of tolerance to space ionizing radiation for ReRAM and other non-volatile memory types
Author(s) -
Andrey G. Petrov,
Ivan I. Shvetsov-Shilovskiy,
Sergey B. Shmakov,
Anastasia V. Ulanova,
Anna B. Boruzdina
Publication year - 2022
Publication title -
bezopasnost informacionnyh tehnology
Language(s) - English
Resource type - Journals
eISSN - 2074-7136
pISSN - 2074-7128
DOI - 10.26583/bit.2022.2.08
Subject(s) - resistive random access memory , non volatile memory , materials science , optoelectronics , magnetoresistive random access memory , ionizing radiation , resistive touchscreen , cmos , flash memory , electrical engineering , computer science , random access memory , irradiation , engineering , embedded system , computer hardware , physics , voltage , nuclear physics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom