
Comparative analysis of tolerance to space ionizing radiation for ReRAM and other non-volatile memory types
Author(s) -
Andrey G. Petrov,
Ivan I. Shvetsov-Shilovskiy,
Sergey B. Shmakov,
Anastasia V. Ulanova,
Anna B. Boruzdina
Publication year - 2022
Publication title -
bezopasnostʹ informacionnyh tehnologij
Language(s) - English
Resource type - Journals
eISSN - 2074-7136
pISSN - 2074-7128
DOI - 10.26583/bit.2022.2.08
Subject(s) - resistive random access memory , non volatile memory , materials science , optoelectronics , magnetoresistive random access memory , ionizing radiation , resistive touchscreen , cmos , flash memory , electrical engineering , computer science , random access memory , irradiation , engineering , embedded system , computer hardware , physics , voltage , nuclear physics