z-logo
open-access-imgOpen Access
Current and capacitance hysteresis in porous semiconductor nanofilms
Author(s) -
Z. Zh. Zhanabaev,
Dana Turlykozhayeva,
S. B. Ikramova,
A. O. Tileu,
A. A. Maksutova,
Bakyt Khaniyev,
Ainur K. Khaniyeva
Publication year - 2020
Publication title -
physical sciences and technology
Language(s) - English
Resource type - Journals
eISSN - 2522-1361
pISSN - 2409-6121
DOI - 10.26577/phst.2020.v7.i2.06
Subject(s) - materials science , capacitance , semiconductor , hysteresis , porous silicon , substrate (aquarium) , optoelectronics , silicon , nanotechnology , etching (microfabrication) , current (fluid) , condensed matter physics , electrical engineering , chemistry , layer (electronics) , electrode , physics , oceanography , engineering , geology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom