Open AccessIon-beam formation of light-emitting structures based on silicon nitride layers on silicon
Author(s) -
Danatbek Murzalinov,
Л. А. Власукова,
И. Н. Пархоменко,
Ф. Ф. Комаров,
А. Аkilbekov
Publication year - 2018
Publication title -
physical sciences and technology
Language(s) - English
Resource type - Journals
eISSN - 2522-1361
pISSN - 2409-6121
DOI - 10.26577/phst-2018-2-155
Subject(s) - materials science , silicon , silicon nitride , irradiation , ion , photoluminescence , amorphous solid , nitride , analytical chemistry (journal) , optoelectronics , annealing (glass) , ion beam , nanocrystalline silicon , amorphous silicon , crystalline silicon , layer (electronics) , nanotechnology , chemistry , crystallography , composite material , physics , organic chemistry , chromatography , nuclear physics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom