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Ion-beam formation of light-emitting structures based on silicon nitride layers on silicon
Author(s) -
Danatbek Murzalinov,
Л. А. Власукова,
И. Н. Пархоменко,
Ф. Ф. Комаров,
A. Аkilbekov
Publication year - 2018
Publication title -
physical sciences and technology
Language(s) - English
Resource type - Journals
eISSN - 2522-1361
pISSN - 2409-6121
DOI - 10.26577/phst-2018-2-155
Subject(s) - materials science , irradiation , silicon , silicon nitride , ion , photoluminescence , amorphous solid , optoelectronics , nitride , annealing (glass) , analytical chemistry (journal) , ion beam , layer (electronics) , nanotechnology , chemistry , crystallography , composite material , physics , organic chemistry , chromatography , nuclear physics

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