
Synthesis and microstructure of p-type porous gallium phosphide layers
Author(s) -
Gauhar Mussabek,
В. Сиваков
Publication year - 2017
Publication title -
physical sciences and technology
Language(s) - English
Resource type - Journals
eISSN - 2522-1361
pISSN - 2409-6121
DOI - 10.26577/phst-2017-2-134
Subject(s) - gallium phosphide , materials science , gallium , semiconductor , scanning electron microscope , raman spectroscopy , etching (microfabrication) , microstructure , dissolution , indium phosphide , isotropic etching , nanotechnology , chemical engineering , optoelectronics , gallium arsenide , metallurgy , composite material , optics , layer (electronics) , physics , engineering