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An analytical approach for prognosis of mass transport during manufacturing of a limiting amplifier circuit. On increasing of integration rate of elements of the amplifier
Author(s) -
E. L. Pankratov
Publication year - 2019
Publication title -
south asian journal of engineering and technology
Language(s) - English
Resource type - Journals
ISSN - 2454-9614
DOI - 10.26524/sajet1918
Subject(s) - limiting , amplifier , dopant , mass transport , materials science , electronic engineering , optoelectronics , computer science , engineering physics , physics , engineering , mechanical engineering , cmos , doping
In this paper we introduce an analytical approach for prognosis of mass transport during manufacturing of a limiting amplifier circuit. Based on this approach we obtain conditions to increase density of elements of this circuit, manufactured by diffusion or ion implantation with optimized annealing time of dopant and/or radiation defects. The above analytical approach gives a possibility to take into account nonlinearity of the mass transport, dependences of parameters of the transport on spatial coordinate and time.

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