
On approach to optimize manufacturing of field-effect hetero transistors frame work a HERIC-inverter to increase their integration rate. On influence mismatch-induced stress
Author(s) -
E. L. Pankratov
Publication year - 2019
Publication title -
south asian journal of engineering and technology
Language(s) - English
Resource type - Journals
ISSN - 2454-9614
DOI - 10.26524/sajet1917
Subject(s) - heterojunction , inverter , transistor , electronic engineering , materials science , dopant , computer science , optoelectronics , doping , electrical engineering , engineering , voltage
In this paper we introduce an approach to increase density of field-effect transistors framework a circuit of HERIC-inverter with photovoltaic (PV) systems. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the hetero structure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.