On approach to increase integration rate of elements of an four-cascade amplifier circuit | Zendy

E. L. Pankratov | Zendy

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On approach to increase integration rate of elements of an four-cascade amplifier circuit

Author(s) -

E. L. Pankratov

Publication year - 2019

Publication title -

south asian journal of engineering and technology

Language(s) - English

Resource type - Journals

ISSN - 2454-9614

DOI - 10.26524/sajet1916

Subject(s) - cascade , dopant , heterojunction , optoelectronics , electronic engineering , amplifier , annealing (glass) , computer science , materials science , integrated circuit , doping , electrical engineering , cmos , engineering , chemical engineering , composite material

In this paper we introduce an approach to increase integration rate of elements of an four-cascade amplifier circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.

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