Open AccessOn approach to increase integration rate of elements of an four-cascade amplifier circuit
Author(s) -
E. L. Pankratov
Publication year - 2019
Publication title -
south asian journal of engineering and technology
Language(s) - English
Resource type - Journals
ISSN - 2454-9614
DOI - 10.26524/sajet1916
Subject(s) - cascade , dopant , heterojunction , optoelectronics , electronic engineering , amplifier , annealing (glass) , computer science , materials science , integrated circuit , doping , electrical engineering , cmos , engineering , chemical engineering , composite material
In this paper we introduce an approach to increase integration rate of elements of an four-cascade amplifier circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.