
Modeling of temperature dependence of holes mobility in silicon carbide
Author(s) -
I. V. Ivanov,
А. Г. Козлов
Publication year - 2019
Publication title -
rossiâ molodaâ: peredovye tehnologii - v promyšlennostʹ
Language(s) - English
Resource type - Journals
ISSN - 2310-4597
DOI - 10.25206/2310-4597-2019-1-136-142
Subject(s) - silicon carbide , materials science , engineering physics , silicon , optoelectronics , physics , composite material