Open AccessHall element with two Schottky barrier contacts Al-p-Si
Author(s) -
Р. Б. Бурлаков
Publication year - 2020
Publication title -
omskij naučnyj vestnik
Language(s) - English
Resource type - Journals
eISSN - 2541-7541
pISSN - 1813-8225
DOI - 10.25206/1813-8225-2020-172-60-65
Subject(s) - schottky barrier , materials science , condensed matter physics , metal–semiconductor junction , hall effect , optoelectronics , physics , electrical engineering , electrical resistivity and conductivity , engineering , diode