Open AccessPhotocell with two Schottky barrier contacts Al-p-Si and ohmic silicide contact
Author(s) -
Р. Б. Бурлаков
Publication year - 2020
Publication title -
omskij naučnyj vestnik
Language(s) - English
Resource type - Journals
eISSN - 2541-7541
pISSN - 1813-8225
DOI - 10.25206/1813-8225-2020-171-86-91
Subject(s) - ohmic contact , schottky barrier , silicide , photoresistor , materials science , optoelectronics , metal–semiconductor junction , engineering physics , metallurgy , silicon , nanotechnology , physics , layer (electronics) , diode