Open AccessPhotocell with two Schottky barrier contacts Ti-p-Si and ohmic silicide contact NiSi-p-Si
Author(s) -
Р. Б. Бурлаков
Publication year - 2020
Publication title -
omskij naučnyj vestnik
Language(s) - English
Resource type - Journals
eISSN - 2541-7541
pISSN - 1813-8225
DOI - 10.25206/1813-8225-2020-169-62-66
Subject(s) - ohmic contact , schottky barrier , silicide , materials science , photoresistor , optoelectronics , contact resistance , silicon , metallurgy , composite material , layer (electronics) , diode