Open AccessElectrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si
Author(s) -
А. И. Блесман,
Р. Б. Бурлаков,
D. A. Polonyankin
Publication year - 2019
Publication title -
omskij naučnyj vestnik
Language(s) - English
Resource type - Journals
eISSN - 2541-7541
pISSN - 1813-8225
DOI - 10.25206/1813-8225-2019-166-61-65
Subject(s) - photoresistor , schottky barrier , photoelectric effect , materials science , optoelectronics , schottky diode , engineering physics , electrical engineering , physics , engineering , diode