Open AccessElectrical and photoelectric properties of photocell on base of Schottky barrier contact Au-n-GaAs
Author(s) -
А. И. Блесман,
Р. Б. Бурлаков
Publication year - 2019
Publication title -
omskij naučnyj vestnik
Language(s) - English
Resource type - Journals
eISSN - 2541-7541
pISSN - 1813-8225
DOI - 10.25206/1813-8225-2019-166-55-60
Subject(s) - photoresistor , photoelectric effect , schottky barrier , optoelectronics , materials science , metal–semiconductor junction , base (topology) , electrical engineering , engineering , mathematics , diode , mathematical analysis