Open AccessThe method for fabricating photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si
Author(s) -
А. И. Блесман,
Р. Б. Бурлаков
Publication year - 2018
Publication title -
omskij naučnyj vestnik
Language(s) - English
Resource type - Journals
eISSN - 2541-7541
pISSN - 1813-8225
DOI - 10.25206/1813-8225-2018-162-164-168
Subject(s) - schottky barrier , photoresistor , materials science , optoelectronics , silicon , metal–semiconductor junction , diode